In this paper, characteristics of the 2-bit recessed channel memory with lifted charge storage nodes are investigated. The length between the charge storage nodes through channel, which is defined as the effective memory node length (Meff), is extende...
In this paper, characteristics of the 2-bit recessed channel memory with lifted charge storage nodes are investigated. The length between the charge storage nodes through channel, which is defined as the effective memory node length (Meff), is extended by lifting up them. The dependence of VTH window and short channel effect on the recessed depth is analyzed. Improvement of short channel effect is obtained because the recessed channel structure increases the effective channel length (Leff). This device shows highly scalable characteristics without suffering from the second bit effect.