고품위 GaN Template 성장을 우한 GaN/N-GaN superlattice의 최적화 연구 = Improvement of the GaN Template quality using the n-GaN/GaN Superlattice

다국어 초록 (Multilingual Abstract)

The Ⅲ-Ⅴ nitride materials have been attracted for high brightness optical devices and high power electronic devices. These GaN-related devices are usually fabricated on a sapphire substrate, because there is no large scale substrate for GaN heteroepitaxial growth. Due to large lattice mismatch and large difference of thermal resulted in high dislocation density. Recently, the lateral epitaxial overgrowth technique has been turned out to be effective in reducing the density of threading dislocations in epitaxial GaN. The LEO technique consists of partially masking a seed layer and subsequently regrowing over the masked layer. Despite of several demonstrations in improved device performance on LED GaN compared to conventional GaN films and Pattern GaN films, defficulties remain expecially in controlling the crystallographic tilt of the LEO GaN. It is important to study the tilt in LEO GaN for optimization of the growth
In this work, we have investigated the effect of growth parameters such as growth temperature on the regrowth of GaN on <1-100> patterned GaN/Al2O3 wafer. Also, we have studied the crystallographic tilt of GaN which is changed with the growth temperature about 700'C. and we have observed that the GaN/nGaN layer thickness. Crystallographic tilt of GaN strongly depends on the growth condition. we try the 2-step Growth. Under this 2-step Growth, the crystallographic tilt of GaN was optimized and also we have grown high Quality MQW on GaN structure.

목차 (Table of Contents)

• Abstract
• 제 1장 서 론 2
• 제 2장 이 론 4
• 2.1 3-5족의 특성 및 물성 비교 4
• 2.2 MOCVD성장 Method 9
• 2.3 사파이어 식각 18
• 2.3.1 사파이어 18
• 2.3.2 사파이어 물성 19
• 2.4 발광다이오드구조 20
• 2.4.1 재료구조 20
• 2.4.2 수명특성 향상기술 22
• 2.4.3. 패키징 기술 23
• 2.5 MOCVD장비의 이해 26
• 제 3장 고품의 GaN template 성장을 위한 GaN/N-GaN superlattice제작 28
• 3.1GaN template 28
• 3.2 HR-XRD(high Resolution X-ray Diffraction) 33
• 3.3 원자 전자 현미경 37
• 3.4 PL 49
• 제 4장 InGaN/GaN LED 성장 및 특성 54
• 4.1 기판위에 LED성장 54
• 4.2 LED의 구동 특성 Data 58
• 제 5장 결론 62
• 참고문헌 63