상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성

다국어 초록 (Multilingual Abstract)

We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600℃ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600℃ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600℃. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600℃. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.

목차 (Table of Contents)

• Abstract
• 1. 서론
• 2. 실험방법
• 3. 실험결과 및 고찰
• 4. 결론
• REFERENCES

참고문헌 (Reference)

1 H. Hosono, 532 : 851-, 2006

2 B. D. Ahn, 48 : 03B019-, 2009

3 H. Yabuta, 89 : 112123-, 2006

4 W. T. Chen, 32 : 1552-, 2011

5 J. S. Park, 92 : 072104-, 2008

6 D. H. Kang, 90 : 192101-, 2007

7 K. Ide, 520 : 3787-, 2012

8 K. Nomura, 45 : 4303-, 2006

9 T. T. Trinh, 26 : 085012-, 2011

10 M. R. Moon, 44 : 1431-, 2012

11 C. C. Lo, 28 : 131-, 2010

12 D. H. Tahir, 42 : 906-, 2010

13 Y. S. Lee, 385 : S595-, 2012

14 C. H. Wu, 45 : 189-, 2012

15 H. S. Jeon, 158 : 158-, 2011

16 M. J. Gader, 99 : 051901-, 2011

17 배성환, "비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구" 한국세라믹학회 47 (47): 329-332, 2010

18 김미선, "다양한 기판온도에서 증착된 투명 전도성 IGZO 박막의 특성" 한국전기전자재료학회 23 (23): 961-965, 2010

19 Hyun Soo Shin, "Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors" 한국정보디스플레이학회 12 (12): 209-212, 2011