<P><B>Abstract</B></P> <P>Perpendicular magnetic anisotropy (PMA) in thin film is the key factor to obtain good properties for high density storage devices. Although the importance of the properties of PMA is well-known ...
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https://www.riss.kr/link?id=A107480929
2015
-
SCOPUS,SCIE
학술저널
252-257(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>Perpendicular magnetic anisotropy (PMA) in thin film is the key factor to obtain good properties for high density storage devices. Although the importance of the properties of PMA is well-known ...
<P><B>Abstract</B></P> <P>Perpendicular magnetic anisotropy (PMA) in thin film is the key factor to obtain good properties for high density storage devices. Although the importance of the properties of PMA is well-known for Co/Pd thin film, it is still unclear which surface structure and composition indicate that PMA is present. In this work, the surface structure and magnetic properties of L1<SUB>0</SUB>-ordered Co/Pd (001) were analyzed using density functional theory calculations. It was confirmed that only Pd-rich A among the facile surface structures indicates PMA properties. However, according to the calculated surface energy, not only Pd-rich A but also Co-rich B is among the most energetically stable structures. The density of states showed a clear distinct electronic structure between Pd-rich A and Co-rich B derived from the structural difference. This result indicates that PMA is not always present in a sandwich structure such as Pd-rich A. The results provide a useful guide to magnetic devices created using L1<SUB>0</SUB>-ordered Co/Pd (001) on substrate Pd.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Investigation on the possible surface structure of L1<SUB>0</SUB>-ordered Co/Pd (001) </LI> <LI> Using surface phase diagram, the stable structures were Pd-rich A and Co-rich B. </LI> <LI> The magnetic property of Pd-rich A and Co-rich B has been measured and discussed. </LI> <LI> Pd-rich A only showed perpendicular magnetic anisotropy. </LI> </UL> </P>
Effect of dopant on metal induced lateral crystallization rate