In this paper, we introduce a method to overcome the limit of the IGBT’s current sensor area by ESD limitation through the new current sensor structure. New current sensor has a optimization with the main IGBT’s current characteristics without any...
In this paper, we introduce a method to overcome the limit of the IGBT’s current sensor area by ESD limitation through the new current sensor structure. New current sensor has a optimization with the main IGBT’s current characteristics without any restriction on ESD, and it has been verified that stable overcurrent diagnosis can be performed without being affected by the external environment and changing the current ratio according to the temperature. It is expected that new current sensor structure will overcome the limit of the current sensor area and improve the operational stability of functionalities.