<P>Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using ...
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https://www.riss.kr/link?id=A107512099
2017
-
KCI등재,SCIE,SCOPUS
학술저널
1616-1621(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using ...
<P>Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using capacitance spectroscopy, the quantum-confined energy shifts in the conduction and valence levels were identified as Delta E-C(eV) = 11.7/d(2), and Delta E-V(eV) = -4.5/d(2), where d is the mean diameter of the silicon nanocrystals in nanometers. These findings indicated that the tensile strain in the silicon nanocrystals significantly increased the quantum confinement, by a factor of 3.3 in the conduction levels, and by a factor of 1.8 in the valence levels. (C) 2017 Elsevier B.V. All rights reserved.</P>
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