Plasma processing is one of the key steps for the fabrication of many advanced electronic and photonic devices, such as DRAM,
heterojunction bipolar transistors, lasers, LEDs, micro-magnetic drives, and planar lightwave circuits. High density plasma
t...
Plasma processing is one of the key steps for the fabrication of many advanced electronic and photonic devices, such as DRAM,
heterojunction bipolar transistors, lasers, LEDs, micro-magnetic drives, and planar lightwave circuits. High density plasma
technologies are becoming popular for pattern transfer and chemical vapor deposition (CVD) of electronic and dielectric
materials. Inductively coupled plasma (ICP) etching results have shown that it is possible to achieve excellent process recipes
for compound semiconductors. ICP-PECVD also provided great advantages for low-temperature (<150°C) SiNx deposition
technology. These data encouraged an expansion of the application of high density plasma processing for manufacturing of new
opto-electronic devices. This paper will report recent developments of SiNx deposition and GaAs etching results in inductively
coupled plasma systems.