<P>Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs...
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https://www.riss.kr/link?id=A107459829
2019
-
SCI,SCIE,SCOPUS
학술저널
055010
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs...
<P>Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.</P>