Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

다국어 초록 (Multilingual Abstract)

In this study, Si0.5Ge0.5 was used as a source junction material in a tunneling field‐effect transistor (TFET), which was analyzed using technology computer‐aided design (TCAD) simulation and a small‐signal non‐quasi static (NQS) equivalent circuit. The NQS equivalent circuit with additional tunneling resistance (Rtunnel) enables more accurate analyses. By using a de‐embedding process, small‐signal parameters in the intrinsic area were obtained. This process was used to analyze the resistance and capacitance in each section, the tendencies of the materials, and the voltage. The error between the NQS equivalent circuit and TCAD device simulation was within 1.9% in the 400‐GHz regime. A cut‐off frequency (fT) of up to 0.876 GHz and maximum oscillation frequency (fmax) of 146 GHz were obtained.