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https://www.riss.kr/link?id=O39407960
1998년
eng
0161-6374
2576-1579
학술저널
PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV
1593-1609 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
1566771951
Silicon materials science and technology
International symposium; 8th
San Diego; CA
1998; May
0
상세조회0
다운로드
Introductory Remarks - Status and Trends in Microscopic Physics and Modeling
Invited: Diffusion Mechanisms in SiGe Alloys
Invited: Dopants and Intrinsic Point-Defects During Si Device Processing
Invited: Point Defect Based Modeling of Dopant Diffusion and Transient Enhanced Diffusion in Silicon