기판의 종류에 따른SnO2 박막의 전기적인 특성 연구 = Study on the Electrical Characteristics of SnO2 on p-Type and n-Type Si Substrates

다국어 초록 (Multilingual Abstract)

SnO2 thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between SnO2 and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. SnO2 thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact’s properties by complementary using the XPS analysis and I-V measurement.

참고문헌 (Reference)

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