p형 Si(100) 기판 상에 안티몬 도핑된 n형 Si박막 구조를 갖는 pn 다이오드 제작 및 특성 = Fabrication and Properties of pn Diodes with Antimony-doped n-type Si Thin Film Structures on p-type Si(100) Substrates

다국어 초록 (Multilingual Abstract)

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from 6.83×1018 cm-3 to 1.27×1019 cm-3 and from 62 to 89 cm2/V·s, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

참고문헌 (Reference)

1 "http://www.wwfkorea.or.kr/news_resources_home1/news/?uNewsID=229870"

2 "http://www.electimes.com/article.php?aid=1489618121142726005"

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5 Kim, K. -H., "Fabrication and Properties of Antimony-doped Si Thin Films" 34 (34): 203-208, 2017

6 김광호, "DIPAS(디이소프로필아미노 실란; Diisoprophylamino Silane) 소스를 이용한 Si 박막 형성 및 특성" 한국정보기술학회 12 (12): 25-30, 2014

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