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      Transducers and their elements : design and application

      한글로보기

      https://www.riss.kr/link?id=M1234354

      • 저자
      • 발행사항

        Englewood Cliffs, N.J. : PTR Prentice Hall, c1994

      • 발행연도

        1994

      • 작성언어

        영어

      • 주제어
      • DDC

        681/.2 판사항(20)

      • ISBN

        0139294805

      • 자료형태

        일반단행본

      • 발행국(도시)

        New Jersey

      • 서명/저자사항

        Transducers and their elements : design and application / Alexander D. Khazan.

      • 형태사항

        xvi, 572 p. : ill. ; 29 cm.

      • 일반주기명

        Includes bibliographical references (p. 545-560) and index.

      • 소장기관
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      목차 (Table of Contents)

      • CONTENTS
      • PREFACE = xi
      • INTRODUCTION = xv
      • CHAPTER 1 TRANSDUCER CHARACTERISTICS AND STRUCTURES = 1
      • Measurands = 1
      • CONTENTS
      • PREFACE = xi
      • INTRODUCTION = xv
      • CHAPTER 1 TRANSDUCER CHARACTERISTICS AND STRUCTURES = 1
      • Measurands = 1
      • Operating Principles = 5
      • Design Characteristics = 7
      • Performance Characteristics = 7
      • Reliability Characteristics = 7
      • Transducer Structure = 13
      • CHAPTER 2 CONTACT, RESISTIVE, AND ELECTRODE ELEMENTS = 19
      • Contact Elements = 19
      • Junction Resistance Elements = 23
      • Potentiometric Elements = 26
      • Strain-gage Elements = 38
      • Liquid Strain Gages = 39
      • Plastic Strain Gages = 40
      • Metal Strain Gages = 40
      • Electrode Elements = 54
      • Electrical Potentials and Conductivity of Solutions = 54
      • Elements for the Measurement of Conductivity = 60
      • Displacement-sensitive Elements with Electrodes = 65
      • Resistive Elements for Hygrometry = 66
      • Memistors = 67
      • PH-sensitive Elements with Electrodes = 68
      • ORP or Redox Elements = 71
      • Oxygen-sensitive Elements = 72
      • Polarographic Cells = 73
      • Coulomb-meter Elements = 74
      • Electrokinetic or Zeta Potential Elements = 77
      • CHAPTER 3 CAPACITIVE AND INDUCTIVE ELEMENTS = 79
      • Capacitive Elements = 79
      • Structures of Capacitive Elements = 80
      • Equivalent Circuits and General Characteristics = 82
      • Single Displacement Elements = 85
      • Differential Displacement Elements = 86
      • Angle Displacement Elements = 87
      • Film-thickness Elements = 88
      • Large Displacements and Level Elements = 88
      • Displacement-to-phase Converters = 91
      • Pressure-sensitive Capacitive Elements = 93
      • Other Elements = 102
      • Electrostatic Forces and Nonlinear Dynamics = 105
      • Attenuation of Sensitivity in a Microelectronic Capacitive Element = 108
      • Temperature Instabilities = 109
      • Features = 111
      • Inductive Elements = 112
      • Structures of Inductive Elements = 113
      • Equivalent Circuits and General Characteristics = 113
      • Single Displacement Elements = 121
      • Differential Displacement Elements = 127
      • Solenoid Elements = 128
      • Coil-displacement Elements = 130
      • Long-displacement Elements = 133
      • Proximity Elements = 135
      • Thickness-of-metal sensitive Elements = 137
      • Magnetostrictive Elements = 140
      • Other Elements = 151
      • Electromagnetic Forces and Nonlinear Dynamics = 154
      • Temperature Instabilities = 162
      • Features = 164
      • CHAPTER 4 TRANSFORMER, ELECTRODYNAMIC, SERVO, AND RESONANT ELEMENTS = 167
      • Transformer Elements = 167
      • Single-core Transformers = 167
      • Differential Transformers = 169
      • Rotating-coil Transformers = 169
      • Synchro-transformers = 170
      • Weak-field Sensors = 171
      • Electrodynamic Elements = 173
      • Moving-coil Elements = 174
      • Variable-reluctance Elements = 175
      • Electromagnetic Flowmeters = 176
      • Nonelectrode Electromagnetic Flowmeters = 179
      • Elements of Servo Transducers = 180
      • Resonant Elements = 186
      • Vibrating Strings = 187
      • Vibrating Beams = 190
      • Vibrating Capsules = 193
      • Vibrating Cylinders = 199
      • Piezoelectric Resonators = 202
      • Acoustical Resonators = 208
      • Microwave Cavity Resonators = 212
      • Various Resonators = 212
      • CHAPTER 5 MECHANICAL, ACOUSTICAL, AND FLOWMETERING ELEMENTS = 216
      • Elastic Elements = 216
      • Absolute Pressure Capsules = 229
      • Capsule Structure = 229
      • Capsule Material, Shape, and Size = 231
      • Stressed State of Diaphragm = 232
      • Capsule Transfer Characteristic = 235
      • Dynamic Characteristics of the Diaphragm = 237
      • Temperature Drifts = 238
      • Sensitivity to Acceleration = 238
      • Some Characteristics of Design = 239
      • Inertial-mass Elements = 240
      • Sensing and Transduction Elements of Flowmeters = 244
      • Ultrasonic Elements = 255
      • Acoustical Elements = 259
      • Acoustical Filters = 264
      • CHAPTER 6 HEAT-EXCHANGE ELEMENTS = 267
      • Temperature-sensitive Elements = 267
      • Hot-wire Elements = 274
      • CHAPTER 7 CHARACTERISTICS OF SOLID-STATE TRANSDUCING DEVICES = 277
      • Solids in Sensors = 278
      • Electroconducitivity of Solids = 278
      • Electrical Characteristics of Semiconductors = 280
      • Semiconductor Junctions = 285
      • Bipolar Transistors = 288
      • Field-effect Transistors(FET's) = 291
      • Metal-oxide-silicon FET's(MOSFET's) = 292
      • Crystal Structures of Semiconductors = 295
      • Mechanical Characteristics of Semiconductors = 297
      • CHAPTER 8 FABRICATION OF MICROSENSORS = 307
      • Basic Operations in Fabrication of Microsensors = 307
      • Purification of Silicon = 308
      • Growth of silicon Crystals = 308
      • Ingot Slicing = 309
      • Diffusion = 310
      • Oxidation = 312
      • Photolithographic Processes = 312
      • Chemical-Vapor Deposition = 316
      • Etching of Silicon = 319
      • Metallization = 324
      • Thermomigration = 327
      • Wafer Probing = 327
      • Die Separation = 327
      • Die Attachment = 328
      • Other Technologies = 332
      • Fabrication of Pressure-sensitive Microstructures = 348
      • Fabrication of Surface-sensitive Structures = 355
      • CHAPTER 9 MICROMECHANICAL SENSING AND ACTUATING STRUCTURES = 357
      • Electromechanical Microsensors = 357
      • Surface Acoustical Wave(SAW) Microsensors = 357
      • Resonant Microsensors = 363
      • Microaccelerometers = 376
      • Pressure Microsensors = 382
      • Microactuators and Micromotors = 391
      • Semiconductor Strain Gages = 393
      • Strain-sensitive Junction Structures = 402
      • Piezoelectric Elements = 404
      • CHAPTER 10 TEMPERATURE-AND LIGHT-SENSITIVE MICROSTRUCTURES AND FIBER-OPTIC SENSORS = 416
      • Solid-state Temperature Sensors = 416
      • Thermistors = 416
      • Silicon Resistive Temperature Sensors = 419
      • Thermal Sensors Based on Transistors = 420
      • Integrated Thermocouples = 422
      • Other Temperature Sensors = 424
      • Photodetectors = 426
      • Thermal Detectors = 426
      • Pneumatic Datectors = 428
      • Pyroelectric Detectors = 428
      • Photoemissive Devices = 429
      • Photoconductive Detectors = 431
      • Photodiodes = 434
      • Avalanche Photodiodes = 439
      • Schottky Photodiodes = 440
      • Phototransistors = 440
      • Charge-coupled Devices(CCD's) = 441
      • Thin-film Diffraction-grating Radiation Detector = 441
      • Pyrometer Sensor = 442
      • Applications of Photosensors = 446
      • Fiber-optic Sensors = 446
      • Fibers as Light Guides = 447
      • Basic Concepts of Fiber Sensors = 450
      • Sensors with Movable Shutters, Gratings, or Light-carrying Elements = 450
      • Reflection Sensors = 453
      • Fiber-optic Pressure Sensors = 453
      • Intrinsic Multimode Sensors = 454
      • Temperature Sensors = 455
      • Principles of Phase-modulated Sensors = 457
      • Fiber-optic Gyroscopes = 459
      • Single-mode-fiber polarization Sensors = 461
      • Other Fiber Sensors = 462
      • CHAPTER 11 MISCELLANEOUS MINIATURE SENSORS = 464
      • Magnetic Sensors = 464
      • Hall-effect Sensors = 464
      • Magnetoresistors = 467
      • Other Sensors = 469
      • Soild-state Chemical Sensors = 472
      • Silicon-based Sensors = 473
      • Semiconducting Metal Oxide Sensors = 474
      • Catalysts = 475
      • Soild Electrolyte Sensors = 475
      • Membranes = 475
      • Other Sensors = 476
      • Basic Factors of Microsensor Design = 478
      • APPENDIX 1 TRANSDUCER SCHEMES = 482
      • APPENDIX 2 TENSORS = 538
      • REFERENCES = 545
      • INDEX = 561
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