Properties of DC magnetron sputter-deposited W and WNx absorber films were investigated for x-ray mask applications. Low stress film (≤5 × 10^8 dyne/㎠ tensile stress) is difficult to obtain with pure Ar gas as the film stress changes from highly ...
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https://www.riss.kr/link?id=A3204970
Ahn, Jinho (Department of Materials Engineering, Hanyang University) ; LEE, Taeho (Division of Materials Engineering, Hanyang University) ; LEE, Seungyoon (Division of Materials Engineering, Hanyang University)
1997
English
559.000
SCI,SCIE,SCOPUS,KCI등재
학술저널
272-276(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Properties of DC magnetron sputter-deposited W and WNx absorber films were investigated for x-ray mask applications. Low stress film (≤5 × 10^8 dyne/㎠ tensile stress) is difficult to obtain with pure Ar gas as the film stress changes from highly ...
Properties of DC magnetron sputter-deposited W and WNx absorber films were investigated for x-ray mask applications. Low stress film (≤5 × 10^8 dyne/㎠ tensile stress) is difficult to obtain with pure Ar gas as the film stress changes from highly compressive to highly tensile with pressure change. The variation of stress with pressure is significantly reduced with N₂/Ar mixture gas, and a reasonable tensile stress and stress stability were obtained with 5% N₂ at 3.5 mTorr. Film density decreases with increasing sputtering pressure and N₂/Ar + N₂ ratio. XRD patterns for films deposited at 3.5 mTorr show crystalline α-W structure for Ar sputtered film but amorphous structure for 5% N₂-sputtered film. Surface smoothness is very good at 5% N, but further increase of N₂/Ar+N₂ ratio results in a surface roughening and this is also confirmed by TEM analysis. At this sputtering condition (5% N₂, 3.5 mTorr), film stress stability during air-exposure and annealing was also superior, suggesting a optimum process condition for W-based absorber films.
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