RF 마그네트론 스퍼트링법에 의해 제조된 ATO 박막의 전기적 및 광학적 특성 = The Electrical and Optical Characteristics of ATO Films Preparedby RF Magnetron Sputtering Method

국문 초록 (Abstract)

본 연구에서는 투명 전도막으로 사용할 안티몬주석산화물 박막의 특성변수인 RF 전력, T-S간 거리 등의 변 화에 따른 박막의 광학적, 전기적, 구조적 특성을 알아보았다. 방법: 안티몬주석산화물 박막을 마그네트론 스퍼트링 방법으로 실온에서 SnO2:Sb2O5=95:5 wt%의 비율로 제작하였다. 결과: 안티몬주석산화물 박막은 RF 입력전력에 가장 민감한 특성변화를 보였는데, 30W의 RF 입력전력에서 광투과율이 78%, 표면거칠기가 0.56 nm, 면저항이 1007 Ω톍m-2이었다. 결론: 안티몬주석산화물 박막은 T-S간 거리와 RF 전력에 따라 구조적, 광학적 및 전기적 특성 이 크게 달라지는 것을 확인하였다.

다국어 초록 (Multilingual Abstract)

Purposes: The purposes of this study were to investigate the optical, structural and electrical properties of the antimony doped tin oxide(ATO) thin films according to certain variable deposition conditions, such as RF input power and T-S (target-substrate) distance change, using transparent conducting oxide (TCO). Methods: ATO thin films of Sb concentration ratio with SnO2:Sb2O5=95:5 wt% were deposited at room temperature by RF magnetron sputtering method. Results: ATO thin films were most sensitive to the RF input power: light transmittance was 78% at RF input power of 30W, and 0.56 nm for the surface roughness and 1007 Ω톍m-2 for the sheet resistance as well. Conclusions: It was found that ATO thin films were showed the large change in its characteristics of structural, optical and electrical properties which were affected by T-S distance and RF input power.

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