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Electronic states at ZnSe/Ge interface: a theoretical study
Peressi, M. EDITRICE COMPOSITORI 1997 p.13-22
Microscopic processes behind metal homoepitaxy
Ruggerone, P. EDITRICE COMPOSITORI 1997 p.33-42
Materials science of defected silicon by tight-binding molecular dynamics
Colombo, L. EDITRICE COMPOSITORI 1997 p.61-70
A method for the simulation of fracture at the atomic scale
Cleri, F. EDITRICE COMPOSITORI 1997 p.71-88
Inelastic contribution to the structure factor of silicon
Sterner, H. EDITRICE COMPOSITORI 1997 p.89-96
First-principles studies of materials properties of refractory compounds
Wolf, W. EDITRICE COMPOSITORI 1997 p.97-104