1 "Surfactant-Catalyzed Chemical VaporDeposition of Copper Thin Films" 12 : 2076-2081, 2000
2 "Phosphorus Atomic Layers Promoting theChemisorption of Highly Polarizable Transition Metallorganic" 2002
3 "Nucleation Reactions and Film Growth of Copper on TiN usingHexafluoroacetylacetonate Copper" 307-317, 1996
4 "MetalorganicChemical Vapor Deposition of Copper using" 3 2962-2968, 2002
5 "High Affinity Self-assembled Monolayers forCopper CVD" 76 : 113-118, 2004
6 "Electrochem and Solid-State Lett" 5 : 2002
7 "Effect of TiN SubstratePlasma Treatment on Copper Chemical Vapor Deposition" 2442-2446, 2004
8 "Effect of Carrier Gas on ChemicalVapor Deposition of Copper with" 3-, 2001
9 "Effect of Alkyl Chain Length" 8529-8538, 1992
10 "Double-level Copper InterconnectionsUsing Selective Copper CVD" 21 : 959-964, 1992
1 "Surfactant-Catalyzed Chemical VaporDeposition of Copper Thin Films" 12 : 2076-2081, 2000
2 "Phosphorus Atomic Layers Promoting theChemisorption of Highly Polarizable Transition Metallorganic" 2002
3 "Nucleation Reactions and Film Growth of Copper on TiN usingHexafluoroacetylacetonate Copper" 307-317, 1996
4 "MetalorganicChemical Vapor Deposition of Copper using" 3 2962-2968, 2002
5 "High Affinity Self-assembled Monolayers forCopper CVD" 76 : 113-118, 2004
6 "Electrochem and Solid-State Lett" 5 : 2002
7 "Effect of TiN SubstratePlasma Treatment on Copper Chemical Vapor Deposition" 2442-2446, 2004
8 "Effect of Carrier Gas on ChemicalVapor Deposition of Copper with" 3-, 2001
9 "Effect of Alkyl Chain Length" 8529-8538, 1992
10 "Double-level Copper InterconnectionsUsing Selective Copper CVD" 21 : 959-964, 1992
11 "-Oriented Copper Films with Excellent SurfaceSmoothness" 138-140, 2000