Improved Initial Growth Behavior of SrO and SrTiO₃ Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}₂ as Sr-Precursor

다국어 초록 (Multilingual Abstract)

<P>An atomic layer deposition (ALD) process for SrTiO<SUB>3</SUB> (STO) thin film growth was developed using a newly designed and synthesized heteroleptic Sr-precursor, {Sr(demamp)(tmhd)}<SUB>2</SUB> (demampH = 1-{[2-(dimethylamino)ethyl](methyl)amino}-2-methylpropan-2-ol, tmhdH = 2,2,6,6-tetramethyl-3,5-heptanedione), which offered an intermediate reactivity toward oxygen between Sr(tmhd)<SUB>2</SUB> and Sr(<SUP>i</SUP>Pr<SUB>3</SUB>Cp)<SUB>2</SUB>. Because of the appropriate reactivity of {Sr(demamp)(tmhd)}<SUB>2</SUB> toward oxygen, the abnormal initial growth behavior (due to interaction between the Sr-precursor and active oxygen contained in the underlying oxidized Ru layer) became negligible during the growth of the SrO and STO films on the Ru electrode, which allowed the growth of the SrO and STO films to be highly controllable with a moderate growth rate. Using Ti(CpMe<SUB>5</SUB>)(OMe)<SUB>3</SUB> as the Ti-precursor and O<SUB>3</SUB> as the oxygen source in the TiO<SUB>2</SUB> ALD subcycle, the ALD process of the STO film revealed a growth rate of 0.05 nm/cycle and ∼85% of step coverage in terms of the thickness and cation composition on a capacitor hole structure with an aspect ratio of 10 (opening diameter of 100 nm and depth of 1 μm). The minimum achievable equivalent oxide thickness (<I>t</I><SUB>ox</SUB>) with a low leakage current (<10<SUP>–7</SUP> A/cm<SUP>2</SUP> at 0.8 V) was limited to 0.46 nm. The damage effect on the underlying Ru electrode by the prolonged ALD process time appears to affect the limited scalability of <I>t</I><SUB>ox</SUB>.</P><P><B>Graphic Abstract</B>
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