<P>Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an ar...
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https://www.riss.kr/link?id=A107738105
2016
-
SCOPUS,SCIE
학술저널
27115-27121(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an ar...
<P>Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO2/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 Omega/square, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO2 and NH3 gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems;. thereby opening up new possibilities for using graphene in versatile applications.</P>
Self-Positioned Nanosized Mask for Transparent and Flexible Ferroelectric Polymer Nanodiodes Array