It is shown that efficient solar cells using oxide ZnO on single crystal silicon can be made by rf sputtering, The optical transparancy and ease of preparation of these films is excellent and the conductivity can easily be brought within the appropria...
It is shown that efficient solar cells using oxide ZnO on single crystal silicon can be made by rf sputtering, The optical transparancy and ease of preparation of these films is excellent and the conductivity can easily be brought within the appropriate range of solar cell use by heat treatment in H₂. The transmission is typically 80 percent averaged over visible range. The open circuit voltage and fill factor is decreased, and the short circuit current is increased with increasing heat treatment temperature. The maximum conversion efficiency can be obtained when ZnO/Si device is heated at 350(℃) in H₂, 10 min and ZnO thickness is 5,000(Å).