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Design optimization of the bit and word lines in magnetic random access memory in the Stoner-Wohlfarth model

한글로보기

https://www.riss.kr/link?id=A107531762

저자

Lee, T. H. ; Lim, S. H.
발행기관
WILEY-VCH Verlag
학술지명
Physica Status Solidi C
권호사항

Vol.4 No.12 [2007]
발행연도
2007
작성언어
-
주제어

85.70.Ay ; 85.75.Dd
자료형태
학술저널
수록면

4341-4344(4쪽)
제공처
ScienceON
소장기관
- [무료]서울대학교 외국학술지지원센터(자연과학)
- 서울대학교 중앙도서관

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다국어 초록 (Multilingual Abstract)

The optimization in the design of the bit and word lines in magnetic random access memory is performed in the Stoner-Wohlfarth model. This is done by calculating the asteroid curves as a function of the angle between the bit and word lines. The calculation essentially involves finding the energy minima of the system. The switching field is reduced greatly when the angle between the bit and word lines is deviated from the right angles. Thermal stability of half-selected cells, which is estimated by calculating the energy barrier, is also improved significantly. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

번역하기

The optimization in the design of the bit and word lines in magnetic random access memory is performed in the Stoner-Wohlfarth model. This is done by calculating the asteroid curves as a function of the angle between the bit and word lines. T...

The optimization in the design of the bit and word lines in magnetic random access memory is performed in the Stoner-Wohlfarth model. This is done by calculating the asteroid curves as a function of the angle between the bit and word lines. The calculation essentially involves finding the energy minima of the system. The switching field is reduced greatly when the angle between the bit and word lines is deviated from the right angles. Thermal stability of half-selected cells, which is estimated by calculating the energy barrier, is also improved significantly. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)