Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide thin-film transistors were investigated under the condition of VGS/VDS=30V/10V and VGS/VDS=10V/30V stress through incorporating forward/reverse read-out conditions. Throug...
Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide thin-film transistors were investigated under the condition of VGS/VDS=30V/10V and VGS/VDS=10V/30V stress through incorporating forward/reverse read-out conditions. Through the investigation, we were able to find out that the uniform electron trapping is the dominant mechanism when the VGS/VDS=30V/10V stress is applied. On the other hand, different local VT near the drain and source is caused due to the local electron trapping in the drain and by the local hole trapping near the source when the VGS/VDS=10V/30V stress is applied.