Transient Voltage Suppressor Diode Designed for the Protection of High-brightness GaN-based LEDs from Various Electrostatic Discharge Shocks

다국어 초록 (Multilingual Abstract)

Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technologyand were employed to improve the electrostatic discharge (ESD) strength of GaN lightemitting diodes (LEDs). The ESD performance and the protection capability of the TVS diodeswere investigated using various ESD simulators of the human body model (HBM), the IEC (InternationalElectrotechnical Commission) 61000-4-2 (IEC), and a transmission line pulse (TLP)analysis. According to the IEC, the manufactured TVS diode could withstand in excess of ±30kV without any degradation in the I-V characteristics; meanwhile, the GaN LED itself exhibitedcatastrophic degradation caused by weak ESD power. The GaN LED assembled with the TVSdiode had improved ESD robustness from ±3.8 kV to ±8 kV according to the HBM, from ±1.2 kVto > ±30 kV according to the IEC, and from 4.3 A to > ±30 A according to the TLP analysis.
Furthermore, its performance was maintained perfect I-V manner with negligible changes in radiantpower, leakage current and breakdown voltage up to the limit of the ESD simulators. Namely, themanufactured TVS diodes were effective in the protection of sensitive GaN LEDs from very strongESD shocks.

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