A three terminal semiconductor device with the characteristics of voltage controlled negative resistance called λ-bipolar transistor is studied experimentally and theoretically.
Its structure can be realized by merging N-channel enhancement MOSFET i...
A three terminal semiconductor device with the characteristics of voltage controlled negative resistance called λ-bipolar transistor is studied experimentally and theoretically.
Its structure can be realized by merging N-channel enhancement MOSFET into the base region of integrated npn bipolar transistor.
The operation principle and mechanism controlling the differential negative resistance of this device is analyzed and the experimental results are in good agreement with the theory.