<P>We present two types of Si photonics-wireless interface (PWI) integrated circuits (ICs) realized in standard Si technology. Our PWI ICs convert optical signals into radio-frequency (RF) signals for downlink remote antenna units in fiber-wirel...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107669131
2013
-
SCOPUS,SCIE
학술저널
22962-22973(12쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We present two types of Si photonics-wireless interface (PWI) integrated circuits (ICs) realized in standard Si technology. Our PWI ICs convert optical signals into radio-frequency (RF) signals for downlink remote antenna units in fiber-wirel...
<P>We present two types of Si photonics-wireless interface (PWI) integrated circuits (ICs) realized in standard Si technology. Our PWI ICs convert optical signals into radio-frequency (RF) signals for downlink remote antenna units in fiber-wireless networks. Characterization and modeling of Si avalanche photodetectors (APDs) fabricated in two different Si technologies are carried out and used for PWI IC design. A 5-GHz RF-over-fiber PWI IC composed of APD, preamplifier, and power amplifier (PA) is fabricated in 0.18-μm CMOS technology and its performance is verified by 54-Mb/s wireless local area network data transmission. A 60-GHz baseband-over-fiber PWI IC containing APD, baseband photoreceiver, 60-GHz binary phase-shift keying (BPSK) modulator, and 60-GHz PA is realized in 0.25-μm SiGe BiCMOS technology. Error-free transmission of 1.6-Gb/s BPSK data in 60 GHz with this PWI IC is successfully achieved.</P>
Phase measurement of fast light pulse in electromagnetically induced absorption.
Synthetic Fourier transform light scattering.
InGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact.