RISS 검색 - 국내학술지논문 상세보기

부가정보

다국어 초록 (Multilingual Abstract)

We investigated the package effect on the temperature-dependent optical and spectral characteristics of InGaN/GaN near-ultraviolet (NUV) lateral light-emitting diodes (LLEDs) on the metal heatsink (MH) and package (PKG) in the injection current range of 0 - 500 mA at 298 and 358 K.
For the NUV LLEDs on the MH, the device characteristics reflected directly its chip performance.
For the NUV LLEDs on the PKG, the rapidly varied spectral shift as well as the reduced device efficiency was observed due to the increased number of layers with relatively low thermal conductivities.
The junction temperature (Tj) and thermal resistance of the NUV LLEDs on the PKG were also significantly increased compared to the NUV LLEDs on the MH. The three-dimensional heat transfer simulations for both the devices were carried out to obtain the temperature distributions by finite element method. The theoretically calculated Tj values showed a good agreement with the experimentally measured Tj values.

참고문헌 (Reference)

1 D. A. Steigerwald, 8 : 310-, 2002

2 C. Lu, 113 : 013102-, 2013

3 S. Muthu, 8 : 333-, 2002

4 M. Koike, 8 : 271-, 2002

5 F. M. Steranka, 194 : 380-, 2002

6 S. J. Chang, 8 : 744-, 2002

7 A. Knauer, 92 : 191912-, 2008

8 R-C. Tu, 15 : 1342-, 2003

9 S. H. Lee, 213 : 46-, 2016

10 Y. K. Kuo, 23 : 1630-, 2011

1 D. A. Steigerwald, 8 : 310-, 2002

2 C. Lu, 113 : 013102-, 2013

3 S. Muthu, 8 : 333-, 2002

4 M. Koike, 8 : 271-, 2002

5 F. M. Steranka, 194 : 380-, 2002

6 S. J. Chang, 8 : 744-, 2002

7 A. Knauer, 92 : 191912-, 2008

8 R-C. Tu, 15 : 1342-, 2003

9 S. H. Lee, 213 : 46-, 2016

10 Y. K. Kuo, 23 : 1630-, 2011

11 J. K. Sheu, 15 : 18-, 2003

12 P. Du, 51 : 5427-, 2016

13 Z. Hao, 152 : 40-, 2014

14 J. Zhong, 41 : 12045-, 2015

15 J. Hu, 288 : 157-, 2006

16 J. Hu, 38 : 157-, 2007

17 S. H. Lee, 104 : 20-, 2015

18 M. R. Krames, 3 : 160-, 2007

19 M. Ha, 52 : 836-, 2012

20 M-H. Kim, 91 : 183507-, 2007

21 D. F. Feezell, 9 : 190-, 2013

22 E. Kioupakis, 15 : 125006-, 2013

23 L-C. Chen, 202 : 2836-, 2005

24 J-H. Chen, 498 : 123-, 2006

25 W. Z. Tawfik, 38 : 131-, 2014

26 N. F. Gardner, 91 : 243506-, 2007

27 M. F. Schubert, 93 : 041102-, 2008

28 S-F. Yu, 5 : 022102-, 2012

29 J. Piprek, "Nitride Semiconductor Devices: principles and simulation" Wiley-VCH 2007

동일학술지(권/호) 다른 논문

Velocity Overshoot Degradation in Short-Channel AlGaAs/GaAs HEMTs due to the Minimum Electron Acceleration Lengths
- 한국물리학회
- 한재헌
- 2017
- KCI등재,SCI,SCIE,SCOPUS
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
- 한국물리학회
- 윤형섭
- 2017
- KCI등재,SCI,SCIE,SCOPUS
Effect of Al Composition and V/III Ratio of AlGaN on GaN for Distributed Bragg Reflector
- 한국물리학회
- 정우섭
- 2017
- KCI등재,SCI,SCIE,SCOPUS
Effect of Additives on the Properties of Printed ITO Sensors
- 한국물리학회
- 구지은
- 2017
- KCI등재,SCI,SCIE,SCOPUS

동일학술지 더보기

분석정보

View

상세정보조회

Usage

원문다운로드

대출신청

복사신청

EDDS신청

동일 주제 내 활용도 TOP

주제

연도별 연구동향

연도별 활용동향

연관논문

연구자 네트워크맵

공동연구자 (7)

유사연구자 (20) 활용도상위20명

인용정보 인용지수 설명보기

학술지 이력

학술지 이력
연월일	이력구분	이력상세
2023	평가예정	해외DB학술지평가 신청대상 (해외등재 학술지 평가)
2020-01-01	평가	등재학술지 유지 (해외등재 학술지 평가)
2011-01-01	평가	등재학술지 유지 (등재유지)
2009-01-01	평가	등재학술지 유지 (등재유지)
2007-01-01	평가	SCI 등재 (등재유지)
2005-01-01	평가	등재학술지 유지 (등재유지)
2002-07-01	평가	등재학술지 선정 (등재후보2차)
2000-01-01	평가	등재후보학술지 선정 (신규평가)