A low-voltage triggering dual-directional silicon controlled rectifier(SCR) device for ESD Protection of advanced low voltage CMOS application was proposed and studied using numerical simulation. The device is capable of providing effective protection...
A low-voltage triggering dual-directional silicon controlled rectifier(SCR) device for ESD Protection of advanced low voltage CMOS application was proposed and studied using numerical simulation. The device is capable of providing effective protection for ICs against ESD stresses in the two opposite directions without division of anode and cathode) and the device has area efficiency. Comparing with the conventional dualdirectional SCR, the proposed device has low trigger voltage than conventional device because of added NMOS structure inside proposed device. In the simulation result, the triggering voltage of the device is 6V~9V and the holding voltage is 2.2V~ 4.2V with variation of design parameter, respectively. And the device has same robustness compared to conventional one.