<B>Graphic Abstract</B> <P>Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield (σ) than thin films of AlN and GaN deposited on Si substra...
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https://www.riss.kr/link?id=A107649864
Lau, Shu ; Ping ; Huang, Lei ; Yu, Siu ; Fung ; Yang, Huiying ; Yoo, Jin ; Kyoung ; An, Sung ; Jin ; Yi, Gyu-Chul
2006
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SCOPUS,SCIE
학술저널
736-740(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<B>Graphic Abstract</B> <P>Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield (σ) than thin films of AlN and GaN deposited on Si substra...
<B>Graphic Abstract</B>
<P>Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield (σ) than thin films of AlN and GaN deposited on Si substrates. The dependence of the SEE on the incidence angle of the beam indicates that these heterostructures do not follow the power law. The σ value of the heterostructures is enhanced by the inherited nanostructure from the ZnO nanoneedle template.
<img src='wiley_img/16136810-2006-2-6-SMLL200500424-content.gif' alt='wiley_img/16136810-2006-2-6-SMLL200500424-content'>
</P>