Physical electronics

목차 (Table of Contents)

• CONTENTS
• Prologue
• 1. Atoms and Electrons = 1
• 1.1 Introduction to Physical Models = 1
• 1.2 Experimental Observations = 1
• 1.2.1 The photoelectric effect
• 1.2.2 The Bohr model and dopant ionization energy
• 1.3 Quantum Mechanics = 8
• 1.3.1 Probability and the uncertainty principle
• 1.3.2 The Schr$$\ddot o$$dinger wave equation
• 1.3.3 Infinite potential well problem
• 1.3.4 Tunneling
• 1.4 Atomic Strcuture and Periodic Table = 16
• 1.4.1 The periodic table
• 2. Semiconductors and Their Preparation for Engineering Use = 19
• 2.1 Semiconductors = 19
• 2.2 Crystal Lattice = 23
• 2.2.1 Periodic structures
• 2.2.2 Cubic lattices
• 2.2.3 Planes and directions
• 2.2.4 The crystal structures of semiconductors
• 2.3 Bulk Crystal Growth = 29
• 3. Energy Bands and Charge Carriers in Semiconductors = 31
• 3.1 Bonding Forces in Solids = 31
• 3.1.1 Bonding forces in solids
• 3.1.2 Energy bands
• 3.1.3 Metals, semiconductors and insulators
• 3.1.4 Direct and indirect energy bandgap semiconductors
• 3.1.5 Variation of energy bands with alloy composition
• 3.2 Charge Carriers in Semiconductors = 39
• 3.2.1 Electrons and holes
• 3.2.2 Effective mass
• 3.2.3 Intrinsic semiconductor
• 3.2.4 Extrinsic semiconductor
• 3.2.5 Electrons and holes in quantum wells
• 3.3 Carrier Concentrations = 52
• 3.3.1 The Fermi level
• 3.3.2 Electron and hole concentrations at equilibrium
• 3.3.3 Temperature dependence of carrier concentrations
• 3.3.4 Compensation and space charge neutrality
• 3.4 Drift of Carriers in Electric and Magnetic Fields = 65
• 3.4.1 Conductivity and mobility
• 3.4.2 Effect of temperature and doping on mobility
• 3.4.3 High electric field effect
• 3.4.4 The Hall effect
• 4. The pn Junctions = 73
• 4.1 Fabrication Methods of pn Junctions = 73
• 4.2 The pn Junctions in Equilibrium = 75
• 4.2.1 Depletion layer
• 4.2.2 Built-in potential
• 4.2.3 Space charge at the pn junction
• 4.3 Forward and Reverse-Biased Junctions ; Steady State Conditions = 85
• 4.3.1 Qualitative description of current flow
• 4.3.2 Quasi-Fermi level
• 4.3.3 Metal-Semiconductor contacts
• 4.3.4 The pn heterojunction
• 4.3.5 Carrier injection
• 4.4 Reverse Bias Breakdown = 103
• 4.4.1 Punch through
• 4.4.2 Zener breakdown
• 4.4.3 Avalanche breakdown
• 5. Bipolar Junction Transistor(BJT) = 108
• 5.1 Introduction = 108
• 5.2 Transistor Action = 112
• 5.2.1 Conditions
• 5.2.2 A current flows
• 5.2.3 Current gains
• 5.3 Basic Configurations = 116
• 5.4 Transistor Operating Regions = 117
• 5.5 Current-Voltage Characteristic Curves = 118
• 6. Field Effect Transistor(FET) = 119
• 6.1 Introduction = 119
• 6.2 Junction Field Effect Transistor(JFET) = 120
• 6.3 MOS FET = 122
• 6.4 IC = 126
• 7. Semiconductor Electrochemistry = 127
• 7.1 Introduction = 127
• 7.1.1 Electrochemistry
• 7.1.2 Standard 3-electrode configuration
• 7.2 Electrical Double Layer = 128
• 7.2.1 Compact (Helmholtz) double layer
• 7.2.2 Diffuse (Gouy) double layer
• 7.3 Energy Band Bending = 128
• 7.4 Semiconductor／Electrolyte Interfacial Structure = 129
• 7.4.1 Semiconductor／electrolyte junction structure
• 7.4.2 Semiconductor／electrolyte junction
• 7.5 Applications = 129