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https://www.riss.kr/link?id=O37726951
1997년
eng
1383-7168
학술저널
NATO ASI SERIES 3 HIGH TECHNOLOGY
49-64 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0792350073
Fundamental aspects of ultrathin dielectrics on Si-based devices: towards and atomic scale understanding
NATO Advanced Research Workshop
St Petersburg; Russia
1997; Aug
0
상세조회0
다운로드
Ultrathin dielectrics in silicon microelectronics - an overview
Study of the Si/SiO~2 interface using positrons: present status and prospects
Medium energy ion scattering studies of silicon oxidation and oxynitridation
Stress in the SiO~2/Si structures formed by thermal oxidation