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      KCI등재 SCI SCIE SCOPUS

      Detection of G-Type Nerve Agent Simulants Based on a Double Reflection DBR Porous Silicon Interferometer

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      https://www.riss.kr/link?id=A104128681

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      다국어 초록 (Multilingual Abstract)

      Distributed Bragg reflector (DBR) porous silicon (PSi) chips with two reflection peaks were fabricated by electrochemical etching in an aqueous ethanolic HF solution and were used to detect of chemical nerve agent simulants. Dimethyl methylphosphon...

      Distributed Bragg reflector (DBR) porous silicon (PSi) chips with
      two reflection peaks were fabricated by electrochemical etching in
      an aqueous ethanolic HF solution and were used to detect of chemical
      nerve agent simulants. Dimethyl methylphosphonate (DMMP) is a
      simulant for G-type nerve agents. The manufactured DBR PSi chips
      exhibit two sharp photonic bands, 560 and 717 nm, with narrow full
      widths at half maximum (FWHM) of 15 and 20 nm, respectively. The
      detection method involved the shift of the DBR reflection peaks in
      the reflectivity spectra under exposure to vapors of the analyte.
      Rapid detection was achieved in few seconds in situ and the
      observed red shift of the DBR peaks resulted from an increase in the
      refractive indices in DBR PSi. When the DBR PSi chips were exposed
      to vapor of DMMP, the two reflection peaks from DBR PSi were
      red-shifted by 22 and 32 nm, respectively. Real-time detection for
      the stimulant indicated that the detection measurements were
      reversible. Detection of other analytes, such as triethyl phosphate
      (TEP) and diethyl ethylphosphonate (DEEP), has been also achieved.

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      다국어 초록 (Multilingual Abstract)

      Distributed Bragg reflector (DBR) porous silicon (PSi) chips with two reflection peaks were fabricated by electrochemical etching in an aqueous ethanolic HF solution and were used to detect of chemical nerve agent simulants. Dimethyl methylphosphonate...

      Distributed Bragg reflector (DBR) porous silicon (PSi) chips with
      two reflection peaks were fabricated by electrochemical etching in
      an aqueous ethanolic HF solution and were used to detect of chemical
      nerve agent simulants. Dimethyl methylphosphonate (DMMP) is a
      simulant for G-type nerve agents. The manufactured DBR PSi chips
      exhibit two sharp photonic bands, 560 and 717 nm, with narrow full
      widths at half maximum (FWHM) of 15 and 20 nm, respectively. The
      detection method involved the shift of the DBR reflection peaks in
      the reflectivity spectra under exposure to vapors of the analyte.
      Rapid detection was achieved in few seconds in situ and the
      observed red shift of the DBR peaks resulted from an increase in the
      refractive indices in DBR PSi. When the DBR PSi chips were exposed
      to vapor of DMMP, the two reflection peaks from DBR PSi were
      red-shifted by 22 and 32 nm, respectively. Real-time detection for
      the stimulant indicated that the detection measurements were
      reversible. Detection of other analytes, such as triethyl phosphate
      (TEP) and diethyl ethylphosphonate (DEEP), has been also achieved.

      더보기

      참고문헌 (Reference)

      1 F. Cunin, 1 : 39-, 2002

      2 S. O. Meade, 16 : 1811-, 2004

      3 J. R. Dorvee, 3 : 896-, 2004

      4 S. R. Nicewarner-Pena, 294 : 137-, 2001

      5 J. A. Ferguson, 14 : 1681-, 1996

      6 M. Bruchez, 281 : 2013-, 1996

      7 B.-J. Lee, 491 : 124-126, 2006

      8 S. Jang, 7 : 4049-, 2007

      9 H. Sohn, 122 : 5399-, 2000

      10 B. C. Singer, 39 : 3203-, 2005

      1 F. Cunin, 1 : 39-, 2002

      2 S. O. Meade, 16 : 1811-, 2004

      3 J. R. Dorvee, 3 : 896-, 2004

      4 S. R. Nicewarner-Pena, 294 : 137-, 2001

      5 J. A. Ferguson, 14 : 1681-, 1996

      6 M. Bruchez, 281 : 2013-, 1996

      7 B.-J. Lee, 491 : 124-126, 2006

      8 S. Jang, 7 : 4049-, 2007

      9 H. Sohn, 122 : 5399-, 2000

      10 B. C. Singer, 39 : 3203-, 2005

      11 S. Letant, 13 : 355-, 2001

      12 S. Chan, 123 : 11797-, 2001

      13 S. M. Kanan, 17 : 2213-, 2001

      14 S. M. Aschmann, 109 : 2282-, 2005

      15 S. Jang, 62 : 552-, 2008

      16 S. G. Kim, 313 : 398-, 2008

      17 J. Kim, 7 : 4165-, 2007

      18 C. Pacholski, 127 : 11636-, 2005

      19 V. Lehmann, 78 : 589-, 2001

      20 J. Kim, 313 : 484-, 2008

      21 Y. Koh, 313 : 328-, 2008

      22 H. Fenniri, 123 : 8151-, 2001

      23 W. C. W. Chan, 281 : 2016-, 1998

      24 U. Gangopadhyay, "Porous Silicon as Pressure Sensing Material" 한국물리학회 47 (47): 450-453, 2005

      25 Jongsun Park, "Multiple Bit Encodings of Multilayer Porous Silicon" 한국물리학회 50 (50): 695-699, 2007

      26 Dong-Hwa Yun, "Highly Sensitive and Renewable Amperometric Urea Sensor based on Self-Assembled Monolayer using Porous Silicon Substrate" 한국물리학회 47 (47): 445-449, 2005

      27 김지훈, "Fabrication and Optical Characterization of Rugate-structured Polymer Replicas" 대한화학회 28 (28): 2079-2082, 2007

      28 Youngdae Koh, "Detection of Avidin Based on Rugate-structured Porous Silicon Interferometer" 대한화학회 28 (28): 2083-2088, 2007

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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