<P>We introduce here a carbon nanotube electron beam (C-beam) exposure technique on thin films to apply on display devices. High performance C-beam sources were fabricated with resist-assisted patterning (RAP) using triode DC-PECVD. To understan...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107523036
2016
-
학술저널
11788-11792(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We introduce here a carbon nanotube electron beam (C-beam) exposure technique on thin films to apply on display devices. High performance C-beam sources were fabricated with resist-assisted patterning (RAP) using triode DC-PECVD. To understan...
<P>We introduce here a carbon nanotube electron beam (C-beam) exposure technique on thin films to apply on display devices. High performance C-beam sources were fabricated with resist-assisted patterning (RAP) using triode DC-PECVD. To understand the crystallization process, C-beam exposed amorphous silicon (a-Si:H) thin films deposited on glass substrate were used. Electrons passing through gate mesh, with higher accelerated energy, impact thin amorphous film on the anode plate. After moderated C-beam exposure, the amorphous silicon film becomes crystalline. The structural modification of amorphous silicon film with C-beam was confirmed with XRD and TEM imaging. The crystallized film shows (111)-dominated orientation and average crystalline size of similar to 30 nm. The C-beam exposure technique could be applied for low cost thin film transistor fabrication.</P>
Polymer-Metal Composite Thin Film Microcap Packaging Technology Using Low Temperature SU-8 Bonding