Dielectric Functions and Critical Points of GaAsSb Alloys

다국어 초록 (Multilingual Abstract)

We report the pseudodielectric functions and the critical points of GaAs$_x$Sb$_{1-x}$ ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-$\upmu$m-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the $E_1$, $E_1+\Delta_1$, $E_0'$, $E_0'+\Delta_0'$, $E_2$, $E_2'$, and $E_1'$ critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.

참고문헌 (Reference)

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