<P><B>Abstract</B></P> <P>We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by <I>rf/dc</I>-sputtering with different oxygen partial pr...
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https://www.riss.kr/link?id=A107700025
2019
-
SCOPUS,SCIE
학술저널
211-217(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by <I>rf/dc</I>-sputtering with different oxygen partial pr...
<P><B>Abstract</B></P> <P>We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by <I>rf/dc</I>-sputtering with different oxygen partial pressures (PO<SUB>2</SUB>). As PO<SUB>2</SUB> changed from 0 to 50.0%, the ITGO TFT showed various electrical characteristics such as from conductor-like behavior to transfer curves with positive-shifted threshold voltages (<I>V</I> <SUB> <I>th</I> </SUB>). The TFT at PO<SUB>2</SUB> of 25.0% afforded the best performance, exhibiting field-effect mobility of 14.8 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP>, <I>V</I> <SUB> <I>th</I> </SUB> of 0.56 V, and subthreshold slope of 0.16 Vdec<SUP>−1</SUP> with reasonable electrical stability for gate bias stress. From various analysis techniques, we found that the TFT characteristics and the electrical stability strongly depended on the metal-oxygen surface states of the ITGO films influenced by PO<SUB>2</SUB> during the sputtering process.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Electrical properties of In–Sn-Ga-O (ITGO) thin films with different annealing temperatures. </LI> <LI> Fabrication of ITGO thin-film transistors (TFTs) by <I>rf/dc</I>-sputtering with different oxygen partial pressures (PO<SUB>2</SUB>). </LI> <LI> The changes of electrical characteristics of the ITGO TFTs with increasing PO<SUB>2</SUB> from 0 to 50.0%. </LI> <LI> The TFT characteristics strongly depended on interface states of the ITGO films influenced by PO<SUB>2</SUB>. </LI> </UL> </P>