Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

다국어 초록 (Multilingual Abstract)

An (a-IGZO TFT) is modeled through experimental-based (a-IGZO TFTs) using (TCAD) simulator. A parametric study is performed on the numerical fit of the designed (a-IGZO TFT) current–voltage (I/V) characteristics, to obtain the near conduction band defects parameters optimal values, and to investigate the effect of the near band defects caused by oxygen vacancies on the (a-IGZO TFTs) output parameters. A new model approach is proposed for simulating (a-IGZO) electrical properties. The proposed model is known as a density of state models (DOS), and it is composed of two principal components, conduction band tail ( gAct(E)) and Gaussian distributed donor-like ( gDG(E)) . The study of the presented (DOS) models is based on both conduction band tail elements that are known as tail acceptor density ( gta ) as well as tail acceptor energy ( Ea ), and Gaussian distributed donor-like elements which are donor gaussian energy ( ED ) and donor gaussian distribution ( ggd ). Results show that the tail acceptor states defects ( gta , Ea ) near the conduction band is the cause of the mobility andgaussian donor distribution degradation near the conduction band, and it has a major impact on changes that occur in the subthreshold region data [threshold voltage (V th ), subthreshold swing (SS), and on-state/off -states current ratio (I on /I off )].

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