AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성 = Electrical properties of InSb-like interface in AlSb/InAs/AlSb quantum-well

다국어 초록 (Multilingual Abstract)

We researched the electrical and the structural properties of the
InSb-like top and bottom interfaces of an InAs layer in an
AlSb/InAs/AlSb quantum-well structure grown on a GaAs (001)
substrate by using molecular beam epitaxy. We investigated these
properties by using reflection high-energy electron diffraction,
transmission election microscopy, and Hall effect measurements. We
obtained an electron mobility of 20,700 cm$^2$/V$\cdot$s at room
temperature by using a combination of a 30-nm InAs well and
InSb-like top and bottom interfaces. In addition, according to the
measurement of the temperature dependence, the InAs well interface
formed an InSb-like layer.

다국어 초록 (Multilingual Abstract)

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