Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations

다국어 초록 (Multilingual Abstract)

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal–oxide–semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. GAN-BASED POWER DEVICES
• III. SIMULATION OF SYNCHRONOUS BOOST CONVERTER
• IV. EXPERIMENTAL TESTS ON THE GAN- BASED SYNCHRONOUS BOOST CONVERTER
• V. DISCUSSION AND SUGGESTIONS
• VI. CONCLUSION
• REFERENCES

참고문헌 (Reference)

1 Y. Wu, "kV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 V and 100 kHz" 29 (29): 2634-2637, 2014

2 C. P. Henze, "Zero-voltage switching in high frequency power converters using pulse width modulation" 33-40, 1988

3 H. Yoo, "System integration and power-flow management for a series hybrid electric vehicle using supercapacitors and batteries" 44 (44): 108-114, 2008

4 N. Kaminski, "State of the art and the future of wide band-gap devices" 1-9, 2009

5 A. Elasser, "Silicon carbide benefits and advantages for power electronics circuits and systems" 90 (90): 969-986, 2002

6 J. Biela, "SiC vs. Si-evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors" 58 (58): 2872-2882, 2011

7 J. Shin, "Low-common mode voltage H-bridge converter with additional switch legs" 28 (28): 1773-, 2013

8 H. Liu, "Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique" 61 (61): 2760-2766, 2014

9 M. Rodriguez, "High-frequency PWM buck converters using GaN-on-SiC HEMTs" 29 (29): 2462-2473, 2014

10 U. K. Mishra, "GaN-based RF power devices and amplifiers" 96 (96): 287-305, 2008

11 류동근, "Flyback Inverter Using Voltage Sensorless MPPT for Photovoltaic AC Modules" 전력전자학회 14 (14): 1293-1302, 2014

12 김성윤, "Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope" 대한전기학회 10 (10): 1131-1137, 2015

13 J. Yang, "Efficiency improvement with GaN-based SSFET as synchronous rectifier in PFC boost converter" 1-6, 2014

14 Andrés Lopez, "Efficiency Analysis of a Ladder Multilevel Converter with the Use of the Equivalent Continuous Model" 전력전자학회 14 (14): 1130-1138, 2014

15 Jung-Hoon Lee, "Effects of SPS Mold on the Properties of Sintered and Simulated SiC-ZrB2 Composites" 대한전기학회 8 (8): 1474-1480, 2013

16 M. Hakim, "Drive current improvement in vertical MOSFETS using hydrogen anneal" 217-220, 2012

17 Tae-Hoon Kim, "Design and Control Methods of Bidirectional DC-DC Converter for the Optimal DC-Link Voltage of PMSM Drive" 대한전기학회 9 (9): 1944-1953, 2014

18 D. Han, "Dead-time effect on GaN-based synchronous boost converter and analytical model for optimal dead-time selection"

19 D. Han, "Comprehensive efficiency, weight, and volume comparison of SiC and Si-based bidirectional DC-DC converters for hybrid electric vehicles" 63 (63): 3001-3010, 2014

20 B. Ozpineci, "Characterization of SiC Schottky diodes at different temperatures" 1 (1): 54-57, 2003

21 J. Millan, "A survey of wide bandgap power semiconductor devices" 29 (29): 2155-2163, 2014

22 T. LaBella, "A hybrid resonant converter utilizing a bidirectional GaN AC switch for high-efficiency PV applications" 50 (50): 3468-3475, 2014

23 Chunyang Gu, "A Medium-Voltage Matrix Converter Topology for Wind Power Conversion with Medium Frequency Transformers" 전력전자학회 14 (14): 1166-1177, 2014

24 Y. Wu, "A 97. 8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz" 29 (29): 824-826, 2008