0.1 µm GaAs pHEMT 공정을 활용한 W-대역 구동 및 전력 증폭기 = W-band Driver and Power Amplifiers in 0.1 μm GaAs pHEMT Process

다국어 초록 (Multilingual Abstract)

This paper presents the design and fabrication of the 2-stage driver amplifier and 3-stage power amplifier MMICs(Monolithic Microwave Integrated Circuits) for the transmitter modules of W-band military and commercial systems using 0.1 µm GaAs pHEMT process. The stabilization circuits were utilized in the gate and drain bias circuits and the impedance matching circuits were effectively implemented using RF pads for the compactness of the chip. The two-stage driver amplifier exhibited a linear gain of more than 9 dB and an output return loss of more than 10 dB from 92 to 98 GHz. The three-stage power amplifier had a linear gain of 12∼13.6 dB and an output power of about 19 dBm from 90 to 98 GHz. The fabricated driver and power amplifier MMICs occupy 1×1 mm2 and 1×1.5 mm2 , including RF pads and DC pads.