1 R. Pietruszka, 147 : 164-, 2016
2 Z. Chen, 184 : 211-, 2017
3 Z, B, Fang, 241 : 303-, 2005
4 T. Chen, 98 : 357-, 2010
5 J. H. Kang, 658 : 22-, 2018
6 A. Baltakesmez, 3 : 0321255-, 2013
7 N. H. Al-Hardan, 207 : 61-, 2014
8 A. Kathalingam, 5 : 053085-, 2015
9 L. Zhang, 45 : 485103-, 2012
10 허주회, "버퍼막 두께에 따른 ZnO/ZnO/p-Si(111) 이종접합 다이오드 특성 평가" 한국재료학회 21 (21): 34-38, 2011
1 R. Pietruszka, 147 : 164-, 2016
2 Z. Chen, 184 : 211-, 2017
3 Z, B, Fang, 241 : 303-, 2005
4 T. Chen, 98 : 357-, 2010
5 J. H. Kang, 658 : 22-, 2018
6 A. Baltakesmez, 3 : 0321255-, 2013
7 N. H. Al-Hardan, 207 : 61-, 2014
8 A. Kathalingam, 5 : 053085-, 2015
9 L. Zhang, 45 : 485103-, 2012
10 허주회, "버퍼막 두께에 따른 ZnO/ZnO/p-Si(111) 이종접합 다이오드 특성 평가" 한국재료학회 21 (21): 34-38, 2011
11 C. W. Litton, "Zinc Oxide Materials for Electronic and Optoelectronic Device Applications" John Wiley & Sons 2011
12 S. M. Sze, "Physics of Semiconductor Devices" John Wiley & Sons 92-, 1981
13 B. D. Cullity, "Elements of X-ray Diffraction" Addison-Wesley 99-, 1978
14 조성국, "Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes" 한국물리학회 14 (14): 223-226, 2014