<P><B>Abstract</B></P> <P>Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown ...
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https://www.riss.kr/link?id=A107653597
2018
-
학술저널
70-75(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown ...
<P><B>Abstract</B></P> <P>Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown graphene sheets still remain a big challenge. Here we demonstrate the formation of multilayer graphene (MLG) sheets tailored from C<SUB>60</SUB> thin films on the top of Si/Ni substrate without etching and transfer steps based on Ni films. This self-assembled process separates the MLG sheets from the conductive Ni catalyst, embarking a possibility for direct characterizations of MLG sheets. The fine-tuned C<SUB>60</SUB> films (30nm) are transformed into approximately 17 MLG sheets, thus making it large-area MLG sheets for a variety of direct applications.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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