In this paper, a new low-voltage complementary metal oxide semiconductor voltage differencing transconductance amplifier is proposed, and its performance is demonstrated by comparing its theory and simulated results with conventional versions. The mai...
In this paper, a new low-voltage complementary metal oxide semiconductor voltage differencing transconductance amplifier is proposed, and its performance is demonstrated by comparing its theory and simulated results with conventional versions. The main advantage of the proposed voltage differencing transconductance amplifier is that there are only two transistors composing a path from Vdd to Vss. A secondary advantage is that it can operate at very low voltages of less than ± 0.6V, which is superior to that of conventional models that require ± 0.9V and ± 2V. Additionally, a 10MHz multifunction filter is designed with the proposed complementary metal oxide semiconductor voltage differencing transconductance amplifier, which works both as a lowpass filter and a bandpass filter. The performance of the proposed voltage differencing transconductance amplifier and filter is verified using an HSPICE simulation with complementary metal oxide semiconductor 0.18㎛ process parameters.