1 T. Murata, "Source Resistance Reduction of AlGaN-GaN HFETs with Novel Superlattice Cap Layer" 52 (52): 1042-1047, 2005
2 X. Hu, "Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors" 79 (79): 2831-2834, 2001
3 K. -Y. Na, "N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications" 59 (59): 3273-3279, 2012
4 S. Yang, "High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation" 34 (34): 1497-1499, 2013
5 W. Saito, "Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs" 31 (31): 659-661, 2010
6 J. -B. Ha, "Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique" 31 (31): 848-850, 2010
7 H. n Huang, "Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs" 29 (29): 2164-2173, 2014
8 R. S. Saxena, "Dual-Material-Gate Technique for Enhanced Transconductance and Break Voltage of Trench Power MOSFETs" 56 (56): 517-522, 2009
9 W. Long, "Dual-Material Gate (DMG) Field Effect Transistor" 46 (46): 865-870, 1999
10 R. B. Daring, "Distributed Numerical Modeling of Dual-Gate GaAs MESFET’s" 37 (37): 1351-1360, 1989
1 T. Murata, "Source Resistance Reduction of AlGaN-GaN HFETs with Novel Superlattice Cap Layer" 52 (52): 1042-1047, 2005
2 X. Hu, "Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors" 79 (79): 2831-2834, 2001
3 K. -Y. Na, "N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications" 59 (59): 3273-3279, 2012
4 S. Yang, "High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation" 34 (34): 1497-1499, 2013
5 W. Saito, "Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs" 31 (31): 659-661, 2010
6 J. -B. Ha, "Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique" 31 (31): 848-850, 2010
7 H. n Huang, "Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs" 29 (29): 2164-2173, 2014
8 R. S. Saxena, "Dual-Material-Gate Technique for Enhanced Transconductance and Break Voltage of Trench Power MOSFETs" 56 (56): 517-522, 2009
9 W. Long, "Dual-Material Gate (DMG) Field Effect Transistor" 46 (46): 865-870, 1999
10 R. B. Daring, "Distributed Numerical Modeling of Dual-Gate GaAs MESFET’s" 37 (37): 1351-1360, 1989
11 K. -Y. Park, "Device Characteristics of AlGaN/GaN MIS-HFET using Al2O3 Based High-k Dielectric" 5 (5): 107-112, 2005
12 Young In Jang, "Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor" 대한전자공학회 15 (15): 554-562, 2015
13 J. -H. Lee, "AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature" 60 (60): 3032-3039, 2013
14 T. Sato, "AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-k Oxynitride TaOxNy Gate Dielectric" 34 (34): 375-377, 2013
15 SILVACO International, "ATLAS User’s Manual"
16 S. Sakong, "1/f Charcateristics of Surface-Treated Normally-Off Al2O3/GaN MOSFET" 36 (36): 229-231, 2015