Polyethersulfone(PES) 및 유리 기판위에 제작된 PVP 게이트 절연막의 전기적 특성 = Electrical Properties of PVP Gate Insulation Film on Polyethersulfone(PES) and Glass Substrates

국문 초록 (Abstract)

휨성 유기박막트랜지스터(organic thin film transistor, OTFT)를 제작하기 위하여 게이트 절연막으로 PVP(poly-4-vinylphenol) 유기막을 이용하여 MIM (metal-insulator-metal) 구조의 캐패시터 소자를 제작하였다. 유기 절연층의 형성은 Al/PES (polyethersulfone) 기판과 ITO/Glass 기판 위에 PVP를 용질로, PGMEA(propylene glycol monomethyl ether acetate)를 용매로 사용하였다 또한 열경화성 수지인 poly(melamine-co-(ormaldehyde)를 사용하여 cross-linked PVP 절연막을 합성하여 스핀코팅법으로 소자를 형성하였다. 제작된 소자에 대해 절연막 두께와 기판 종류에 따른 전기적 특성을 조사한 결과 Al/PES 기판을 사용하였을때 누설전류는 1.3 nA로 ITO/glass 기판을 사용했을때의 27.5 nA보다 크게 개선되었다. 또한 제작된 모든 캐패시터 소자의 정전용량은 $1.0{\sim}1.2nF/cm^2$ 범위로 나타났으며 계산값과 매우 유사한 결과를 얻을 수 있었다.

다국어 초록 (Multilingual Abstract)

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

참고문헌 (Reference)

1 "Preparation and properties of PVP gate insulation film for organic thin film transistor" 12 (12): 359-363, 2005

2 "Organic transistors using polymeric gate dielectrics" 42 : S614-S617, 2003

3 "Organic thin-film transistors for organic light-emitting flat-panel display backplanes" 4 (4): 101-104, 1998

4 "Organic oscillator and adaptive amplifier circuits for chemical vapor sensing" 91 : 10140-, 2002

5 "Light-Emitting Field-Effect Transistor Based on a Tetracene Thin Film" 1984

6 "Fabrication of thin film transistor on plastic substrate for application to flexible display" 한국전자공학회 47 (47): 481-485,