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다국어 초록 (Multilingual Abstract)

We report photovoltaic properties of solar cells made of core/shell InGaN/GaN multi quantum wells (MQWs)-nanowire (NW) arrays, vertically-grown through oxide-template hole patterns from n-GaN thin films on n-type Si wafers. Detailed structural properties are analyzed for two types of the solar cells containing defect-free or defective active layer (MQWs) by high-resolution trans- mission electron microscopy. Photocurrent and external quantum eciency are greatly enhanced in the defect-free solar cells due to better charge collection/transport. Maximum power conver- sion eciency (PCE) of 4:22%, highest ever known for the similar structures, is achieved with 1:11 V open-circuit voltage, 6:80 mA/cm2 short-circuit current density, and 0:56 fill factor in the defect-free solar cells. These results suggest that the well-defined active layer in InGaN/GaN MQWs-NWs solar cells is crucial for enhancing their PCE and further explain why the PCE of the solar cells employing similar structures in the previous reports were comparatively low.

참고문헌 (Reference)

1 P. Frajtag, 98 : 143104-, 2011

2 N. A. Fichtenbaum, 46 : 230-, 2007

3 E. D. Le, 114 : 094302-, 2013

4 S. Alberta, 392 : 5-, 2014

5 B. Alloing, 98 : 011914-, 2011

6 H. W. Lin, 97 : 073101-, 2010

7 Y. Dong, 9 : 2183-, 2009

8 Y. Quac, 22 : 16171-, 2012

9 G. K. Mor, 6 : 215-, 2006

10 B. Kannan, 3 : 1729-, 2003

1 P. Frajtag, 98 : 143104-, 2011

2 N. A. Fichtenbaum, 46 : 230-, 2007

3 E. D. Le, 114 : 094302-, 2013

4 S. Alberta, 392 : 5-, 2014

5 B. Alloing, 98 : 011914-, 2011

6 H. W. Lin, 97 : 073101-, 2010

7 Y. Dong, 9 : 2183-, 2009

8 Y. Quac, 22 : 16171-, 2012

9 G. K. Mor, 6 : 215-, 2006

10 B. Kannan, 3 : 1729-, 2003

11 J. M. Macak, 44 : 7463-, 2005

12 S. Funk, 7 : 1091-, 2007

13 A. B. F. Martinson, 7 : 2183-, 2007

14 C. Y. Jiang, 90 : 263501-, 2007

15 M. Law, 4 : 455-, 2005

16 L. E. Greene, 5 : 1231-, 2005

17 K. Peng, 1 : 1062-, 2005

18 B. Tian, 449 : 885-, 2007

19 C. L. Chao, 95 : 051905-, 2009

20 C. H. Ho, 4 : 7346-, 2012

21 X. K. Wu, 10 : 8139-, 2010

22 Z. Y. Fan, 2 : 829-, 2009

23 Y. B. Tang, 8 : 4191-, 2008

24 F. Li, 312 : 2320-, 2010

25 Y. J. Li, 978 : 1-, 2015

26 D. Y. Zhang, 31 : 1422-, 2010

27 Y. J. Hong, 23 : 3284-, 2011

28 B. H. Kong, 258 : 2522-, 2012

29 황성원, "Formation Properties of an InGaN Active Layer for High-Efficiency InGaN/GaN Multi-Quantum-Well-Nanowire Light-Emitting Diodes" 한국물리학회 69 (69): 772-777, 2016

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연월일	이력구분	이력상세
2023	평가예정	해외DB학술지평가 신청대상 (해외등재 학술지 평가)
2020-01-01	평가	등재학술지 유지 (해외등재 학술지 평가)
2011-01-01	평가	등재학술지 유지 (등재유지)
2009-01-01	평가	등재학술지 유지 (등재유지)
2007-01-01	평가	SCI 등재 (등재유지)
2005-01-01	평가	등재학술지 유지 (등재유지)
2002-07-01	평가	등재학술지 선정 (등재후보2차)
2000-01-01	평가	등재후보학술지 선정 (신규평가)