Effect of SnO2 thickness variation on property of SnO2/Ag/Nb2O5/SiO2/SnO2 multi layer film

다국어 초록 (Multilingual Abstract)

This study systematically investigates the dependence of the optical and electrical properties as a function of top SnO2 thicknessof SnO2/Ag/Nb2O5/SiO2/SnO2 multi-layer films deposited on a glass substrate at room temperature. The results of an EMPsimulation suggested that a multilayered thin film consisting of SnO2 (45 nm)/Ag (10 nm)/Nb2O5 (10 nm)/SiO2 (10 nm)/SnO2(30 nm) exhibited a high transmittance of 88.8% at 550 nm while the experimentally-measured transmittance showed 85.3%,which was somewhat lower than what is shown with the simulation data. The lowest Rs and ρ value were of about 5.81 Ω/sqand 5.81 × 10−5 Ω • cm, and these were obtained with a multi-layered structure consisting of SnO2 (40 nm)/Ag (10 nm)/Nb2O5(10 nm)/SiO2 (10 nm)/SnO2 (30 nm). However, the sheet resistance and resistivity of the SnO2/Ag/ Nb2O5/SiO2/SnO2 multi layerfilm increased systematically with an increase in the thickness of the SnO2 layer from 40 to 55 nm. The ΦTC values of the SnO2/Ag/Nb2O5/SiO2/SnO2 multi layer films were shown to be in the range from 10.3 to 33.5 × 10−3 Ω−1.

참고문헌 (Reference)

1 V. Sharma, 379 : 141-145, 2016

2 G. Haacke, 47 : 4086-4089, 1976

3 M. Chalh, 152 : 34-41, 2016

4 Z. Xiao, 164 : 123-127, 2016

5 X. Li, 28 : 6247-6252, 2016

6 B. Sciacca, 28 : 905-909, 2016

7 F. Dauzou, 35 : 136-141, 2016

8 A. T. Barrows, 144 : 600-607, 2016

9 S. Hamrit, 42 : 16212-16219, 2016

10 S. Venkatachalam, 257 : 8923-8928, 2011

11 S. Li, 615 : 56-62, 2016

12 D. Miao, 40 : 12847-12853, 2014

13 S. H. Park, 30 : 112-121, 2016

14 M. Kim, 36 : 61-67, 2016

15 C. H. Lee, 132 : 80-85, 2015

16 C. Tung, "US Patent Application 20150316689 A1"

17 L. Huang, "US Patent Application 20100141608A1"

18 Jin-Gyun Kim, "Optical and electrical properties of SnO2/Ag/SnO2/SiO2/ Nb2O5 hybrid film" 세라믹공정연구센터 17 (17): 80-84, 2016

19 Jiao Long Yu, "Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer" 한국전기전자재료학회 17 (17): 201-203, 2016