<P>Flexible TiO<SUB>2</SUB> crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO<SUB>...
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https://www.riss.kr/link?id=A107585581
2010
-
SCI,SCIE,SCOPUS
학술저널
115203
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Flexible TiO<SUB>2</SUB> crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO<SUB>...
<P>Flexible TiO<SUB>2</SUB> crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO<SUB>2</SUB> /Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10<SUP>4</SUP> cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO<SUB>2</SUB> /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference. </P>
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