Composition and Bonding Structure of Nanostructured Carbon Nitride Films and Their Influences on the Electrical Properties

다국어 초록 (Multilingual Abstract)

Carbon nitride films have been deposited by reactive RF sputtering using facing targets. This configuration
caused tight confinement of energetic electrons between the targets giving an intense plasma discharge. The
surface of carbon nitride films had a good uniformity with a grain size of about 20 to 30 nm. The XPS
analysis revealed that the chemical formula of the carbon nitride film could be expressed as CNx where
x is 0.43-0.48. The films had high resistivity and relatively low dielectric constant, the characteristics of
which could be expected for use for a new insulating film on the Si fabrication.

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