Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt

다국어 초록 (Multilingual Abstract)

The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were developed by using Co(iPr-AMD)2 (bis(N,N0-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma-enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Co films with resistivities as low as 50 µΩcm. For PE-ALD, however, no selective deposition was achieved due to a degradation of the OTS hydrophobicity caused by the NH3 plasma exposure. The effects of the plasma on the blocking efficiency of SAM were studied.

참고문헌 (Reference)

1 H. Kim, 517 : 2563-, 2009

2 K. Raiber, 595 : 56-, 2005

3 X. Jiang, 20 : 3897-, 2008

4 C.-S. Kim, 2 : 185-, 2002

5 F.M. Yang, 90 : 132102-, 2007

6 C.-J. Kim, 93 : 052106-, 2008

7 H. B. R. Lee, 9 : G323-, 2006

8 H. B. R. Lee, 90 : 213509-, 2007

9 B. K. Choi, 7 : 76-, 2007

10 J. H. Lee, 71 : 321-, 2004

11 H. Kim, 21 : 2231-, 2003

12 H. Kim, 20 : 1321-, 2002

13 H. Kim, 20 : 802-, 2002

14 W. H. Kim, 19 : 045302-, 2008

15 D. K. Schwartz, 52 : 107-, 2001

16 K. J. Park, 86 : 051903-, 2005

17 K. E. Elers, 152 : G589-, 2005

18 M. Ylilammi, 279 : 124-, 1996

19 B. S. Lim, 42 : 7951-, 2003

20 A. Almenningen, 107 : 273-, 1976

21 M. Tatoulian, 20 : 10481-, 2004

22 C. Y. Xue, 23 : 5831-, 2007

23 Sungwoo Choi, "Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric" 한국물리학회 44 (44): 35-38, 2004