CaS: EuCl_3, SrS: CeCl_3 thin film electrolumininescent devices were prepared by electron beam evaporation technique. During the phosphor deposition the substrate was kept at a temperature of 350℃.
The red(650nm) and blue(475nm) Light emission was ...
CaS: EuCl_3, SrS: CeCl_3 thin film electrolumininescent devices were prepared by electron beam evaporation technique. During the phosphor deposition the substrate was kept at a temperature of 350℃.
The red(650nm) and blue(475nm) Light emission was observed and the emission brightness B was measured as the function of applied voltage V, frequency f and concentration of rare-earth dopants.
The brightest emission for the CaS: EuCl_3 and SrS: CeCl_3 devices were obtained with the 0.1mol% concentation, respectively.
The maximum brightness were 85fL and 150fL under 5KHz sinusoidal voltage excitation, respectively.