In polymer semiconductor flms, charge transport primarily occurs along the conjugated backbone, making the alignment of polymer chains crucial for superior electrical performance. This study focused on the fabrication of high-mobility organic feld-efe...
In polymer semiconductor flms, charge transport primarily occurs along the conjugated backbone, making the alignment of polymer chains crucial for superior electrical performance. This study focused on the fabrication of high-mobility organic feld-efect transistors (OFETs) based on an ambipolar polymer semiconductor. Using simple directional solution processes, specifcally of-center spin coating and bar-coating techniques, we successfully fabricated complementary-like inverter circuits. These OFETs, compared to their counterparts produced via conventional on-center spin coating, demonstrated enhanced ambipolar behavior and exhibited a heightened feld-efect mobility of up to 4 cm2 /Vs. Furthermore, by optimizing bar-coating conditions to achieve optimal alignment of the polymer chains, we developed a complementary-like inverter with a single-component active layer, demonstrating well-balanced p-channel and n-channel characteristics. The inverter showed an almost ideal switching point at half the supplied bias, with an impressive gain exceeding 30. Conventional organic semiconductors often encounter challenges, such as limited charge mobilities and suboptimal electrical performance. However, by implementing methods that optimize the alignment of polymer semiconductors, these limitations can be surpassed, thereby enhancing overall device characteristics. This allows for the realization of high-performance and economically viable printed and fexible electronic devices.